Masterthesis: Design & Characterization of Highly Efficient GaN-Based Power Converters
Fraunhofer IAF is one of the world‘s leading research institutions in the field of III-V semiconductors and synthetic diamond developing technologies for use in communication, energy, mobility, industry and medicine. In our microelectronics department we assign a master thesis in the field of GaN power electronics.
The Masterthesis includes:
What you bring along:
What we offer:
We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled people will be given preference if equally qualified.
The position is initially limited to 6 months.
The Fraunhofer-Gesellschaft plays a central role in the innovation process by focussing on key technologies relevant to the future and on the exploitation of the results in business and industry. As a signpost and driving force for innovative developments and scientific excellence, it helps to shape our society and our future.
Have we piqued your interest? Then apply via the ‘Apply now’ button with your CV, a cover letter, a current certificate of enrolment and your certificates. Please note that we cannot consider applications by email. We look forward to getting to know you!
Send your application to:
Dr. Dirk Schwantuschke
Phone +49 761 5159-449
dirk.schwantuschke@iaf.fraunhofer.de
Fraunhofer Institute for Applied Solid State Physics IAF
Tullastrasse 72
79108 Freiburg
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kennziffer: 78399 Bewerbungsfrist:
Stellensegment:
CAD, Drafting, Electrical Engineering, Physics, Laboratory, Engineering, Science