Masterthesis: Design & Characterization of Highly Efficient GaN-Based Power Converters
Fraunhofer IAF is one of the world‘s leading research institutions in the field of III-V semiconductors and synthetic diamond developing technologies for use in communication, energy, mobility, industry and medicine. In our microelectronics department we offer a master thesis in the field of GaN power electronics.
The Masterthesis includes:
What you bring along:
What we offer:
The position is initially limited to 6 month. The monthly working time is 40 hours.
Ready for a change? Then apply now and make a difference! After sending your online application, you will receive an automatic confirmation of receipt. We will get back to you as soon as possible and let you know how we will proceed. Do you have questions about the position, the application process, or accessibility? Do you need support? Our recruiter Maria Boerner is here for you: recruiting@iaf.fraunhofer.de, phone +49 761 5159-195.
You can find more accessible information here: Working with disabilities at Fraunhofer IAF - Fraunhofer IAF.
We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, as well as sexual orientation and identity. Severely disabled individuals will be given preference if equally qualified.
Our tasks are diverse and adaptable - for applicants with disabilities, we will jointly find solutions that optimally promote your abilities. The same applies if you do not meet all profile requirements due to a disability.
You can learn more about the Fraunhofer Institute for Applied Solid State Physics here: www.iaf.fraunhofer.de
Fraunhofer Institute for Applied Solid State Physics IAF
Human Resources
Tullastrasse 72
79108 Freiburg
Kennziffer: 78399 Bewerbungsfrist:
Stellensegment:
CAD, Drafting, Physics, Laboratory, Electrical Engineering, Engineering, Science