Masterthesis: Development & Modeling of Highly Efficient RF-Devices

Die Fraunhofer-Gesellschaft (www.fraunhofer.de) betreibt in Deutschland derzeit 76 Institute und Forschungseinrichtungen und ist eine der führenden Organisationen für anwendungsorientierte Forschung. Rund 32 000 Mitarbeitende erarbeiten das jährliche Forschungsvolumen von 3,4 Milliarden Euro.

Fraunhofer IAF is one of the world‘s leading research institutions in the field of III-V semiconductors and synthetic diamond developing technologies for use in communication, energy, mobility, industry and medicine. In our microelectronics department we assign a master thesis in the field of GaN power electronics.

The Masterthesis includes:

RF-characterization of our proprietary GaN based HEMT technologies.
Scalable compact device modeling of advanced high-power RF-HEMT-devices.
Technology Computer Aided Design (TCAD) simulations of GaN HEMTs to improve output power and efficiency.
Thermal simulation and estimation of thermal budget of high-power GaN RF-HEMTs.
Design and characterization of high power HEMT evaluation circuits based on extracted model data.
Literature research.

What you bring along:

You are enrolled as a student in physics, electrical engineering or a comparable degree programme.
You are interested in challenging scientific content from experiment and theory.
You enjoy scientific work.
The ability to work in a team, openness and motivation to work independently and purposefully round off your profile.

What we offer:

A thesis at Fraunhofer IAF allows you to apply the knowlege you have acquired during your studies to specific research projects
With us, you can work scientifically and gain project experience at the same time
We offer modern laboratory equipment, supervision by experienced scientists and a variety of opportunities for further education
By organising your working hours flexibly to suit your studies, we enable you to manage your time freely and independently
There is a Frelo station (bike hire system) and a car park with an e-charging station right next to the institute

We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled people will be given preference if equally qualified.

The position is initially limited to 6 months.

The Fraunhofer-Gesellschaft plays a central role in the innovation process by focussing on key technologies relevant to the future and on the exploitation of the results in business and industry. As a signpost and driving force for innovative developments and scientific excellence, it helps to shape our society and our future.

Have we piqued your interest? Then apply via the ‘Apply now’ button with your CV, a cover letter, a current certificate of enrolment and your certificates. Please note that we cannot consider applications by email. We look forward to getting to know you!

Send your application to:
Dr. Dirk Schwantuschke
Phone +49 761 5159-449
dirk.schwantuschke@iaf.fraunhofer.de
Fraunhofer Institute for Applied Solid State Physics IAF
Tullastrasse 72
79108 Freiburg

Fraunhofer-Institut für Angewandte Festkörperphysik IAF

www.iaf.fraunhofer.de

Kennziffer: 78403 Bewerbungsfrist:

Stellensegment: CAD, Drafting, RF, Physics, Engineering, Science, Research

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