Masterthesis: Development & Modeling of Highly Efficient RF-Devices

Die Fraunhofer-Gesellschaft (www.fraunhofer.de) betreibt in Deutschland derzeit 76 Institute und Forschungseinrichtungen und ist eine der führenden Organisationen für anwendungsorientierte Forschung. Rund 32 000 Mitarbeitende erarbeiten das jährliche Forschungsvolumen von 3,4 Milliarden Euro.

At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society. When will you join us?

In our microelectronics department we offer a master thesis in the field of GaN power electronics.

The Masterthesis includes:

RF-characterization of our proprietary GaN based HEMT technologies.
Scalable compact device modeling of advanced high-power RF-HEMT-devices.
Technology Computer Aided Design (TCAD) simulations of GaN HEMTs to improve output power and efficiency.
Thermal simulation and estimation of thermal budget of high-power GaN RF-HEMTs.
Design and characterization of high power HEMT evaluation circuits based on extracted model data.
Literature research.

What you bring along:

Enrolled student in a physics, electrical engineering or a comparable Master programme
Interest in challenging scientific content from experiment and theory
Enjoyment of scientific work
Ability to work in a team, openness and motivation to work independently and purposefully

What we offer:

Personal support on an equal footing and assistance from experienced scientists and professionals throughout your thesis
Modern laboratory equipment in a new laboratory building
Flexible working hours that fit your studies
Collaboration in an interdisciplinary team, including participation in current projects with clear objectives
An open and team-oriented corporate culture that allows you to contribute your own ideas
Diverse and exciting tasks in the environment of an internationally renowned research institution
Free parking garage with e-charging stations, as well as a Frelo station (bike rental system) and a bus stop directly at the institute

The position is initially limited to 6 month. The monthly working time is 40 hours.

Ready for a change? Then apply now and make a difference! After sending your online application, you will receive an automatic confirmation of receipt. We will get back to you as soon as possible and let you know how we will proceed. Do you have questions about the position, the application process, or accessibility? Do you need support? Our recruiter Maria Boerner is here for you: recruiting@iaf.fraunhofer.de, phone +49 761 5159-195.
You can find more accessible information here: Working with disabilities at Fraunhofer IAF - Fraunhofer IAF

We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, as well as sexual orientation and identity. Severely disabled individuals will be given preference if equally qualified.
Our tasks are diverse and adaptable - for applicants with disabilities, we will jointly find solutions that optimally promote your abilities. The same applies if you do not meet all profile requirements due to a disability.

You can learn more about the Fraunhofer Institute for Applied Solid State Physics here: www.iaf.fraunhofer.de

Fraunhofer Institute for Applied Solid State Physics IAF
Human Resources
Tullastrasse 72
79108 Freiburg

Kennziffer: 78403 Bewerbungsfrist:

Stellensegment: CAD, Drafting, Developer, Semiconductor, Physics, Engineering, Technology, Science

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