Masterthesis: GaN-Based RF Power Devices & Circuits
At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society. When will you join us? In our microelectronics department we assign a master thesis in the field of GaN power electronics.
What you do:
Master’s thesis topics in the area of RF power devices and circuits are based on our in-house GaN HEMT technologies and reflect our research interests, which currently include the following areas:
What you bring along:
What we offer:
We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled people will be given preference if equally qualified.
The position is initially limited to 6 months.
We value and promote the diversity of our employees' skills and therefore welcome all applications, regardless of age, gender, nationality, ethnic and social background, religion, ideology, disability, sexual orientation, or identity. Severely disabled persons with equal qualifications will be given preference.
Our tasks are varied and adaptable—for applicants with disabilities, we work together to find solutions that optimally promote their skills. The same applies if they do not meet all profile requirements due to a disability.
Ready for change? Then apply now and make a difference! After we receive your online application (cover letter, a current certificate of enrolment and your certificates), you will receive an automatic confirmation of receipt. We will then contact you as soon as possible and let you know how to proceed. Do you have questions about the position, the application process, or accessibility? Do you need support?
Our recruiter Maria Boerner is here for you: recruiting@iaf.fraunhofer.de, phone +49 761 5159-195.
Fraunhofer Institute for Applied Solid State Physics IAF
Tullastrasse 72
79108 Freiburg
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kennziffer: 78402 Bewerbungsfrist:
Stellensegment:
Physics, RF, Electrical Engineering, Semiconductor, Science, Research, Engineering