Scientist (all genders) - GaN Epitaxy / MOCVD

The Fraunhofer-Gesellschaft (www.fraunhofer.com) is one of the world's leading organizations for application-oriented research. 75 institutes develop pioneering technologies for our economy and society – more precisely: 32 000 people from technology, science, administration and IT. They know: Anyone who comes to Fraunhofer wants to and can make a difference. For themselves, for us and for the markets of today and tomorrow.

The Fraunhofer-Gesellschaft (www.fraunhofer.com) currently operates 76 institutes and research units throughout Germany and is a leading applied research organization. Around 32 000 employees work with an annual research budget of 3.4 billion euros.

INNOVATIONS FROM A SINGLE SOURCE
CHANGE STARTS WITH US

SHAPING THE FUTURE — TECHNOLOGICALLY and PROFESSIONALLY
At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society.

We are looking for you as a scientist (all genders) for the epitaxy of GaN heterostructures!
Contribute your expertise and look forward to exciting challenges where you can further develop innovative processes and work on groundbreaking research and development projects in a committed environment.

What you will do

In the Epitaxy Department, we are working on strengthening European semiconductor manufacturing capacity as part of our pilot line. We work closely with the Research Fab Microelectronics Germany (FMD), thus making an important contribution to strengthening European competitiveness in the field of semiconductor technologies.
With our modern metal-organic vapor-phase epitaxy (MOCVD) production facilities, we manufacture epitaxial wafers for microelectronic components based on the semiconductor material GaN for applications in radio-frequency technology and power electronics.

Your tasks will include:

Together with your colleagues, you will further develop MOCVD production processes for GaN component structures, particularly with regard to quality, efficiency, yield, and reliability.
In collaboration with the Power Electronics business unit, you will acquire and manage national and international projects to strengthen the European semiconductor industry.
You will work in an interdisciplinary manner with the Epitaxy and Microelectronics departments to develop pioneering solutions.

What you bring to the table

Completed university degree (Master's/Diploma) in physics, materials science, or microsystems engineering, or a similar degree, ideally with a doctorate
Experience in metal-organic vapor-phase epitaxy (MOCVD), particularly in GaN electronics, as well as knowledge of materials science and the functionality of electronic semiconductor devices
Enjoy and enthusiasm in translating research results into applications
Independent working style with the ability to quickly familiarize yourself with new problems
Team spirit, strong communication skills, and enjoyment of experimental work
Ideally: Experience in an industrial environment and in project acquisition and management
Business fluent English skills

What you can expect

Access to state-of-the-art research infrastructure with the latest technology
Committed collaboration with innovative teams and industry on exciting projects
Comprehensive development opportunities through a wide range of training courses and participation in international conferences
A variety of additional benefits, including a company pension plan (VBL), a subsidy for the DeutschlandTicket, and health services
Family-friendly workplace with daycare places at the “Junikäfer” daycare center in Freiburg, a child-friendly office, mobile working and extensive counseling services for home and elder care (pme Familienservice)
Free parking garage, e-charging stations and Frelo station (bike rental system) and bus stop directly at the institute

The weekly working hours are 39 hours. The position can also be filled on a part-time basis. The position is initially limited to three years. Appointment, remuneration and social security benefits based on the public-sector collective wage agreement (TVöD).

We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons will be given preference if equally qualified. Our tasks are diverse and adaptable – for applicants with disabilities, we work together to find solutions that optimally promote their abilities. The same applies if they do not meet all profile requirements due to a disability.

With its focus on key technologies relevant to the future and the exploitation of results in business and industry, the Fraunhofer Society plays a central role in the innovation process. As a guide and catalyst for innovative development and scientific excellence, it helps shape our society and our future.

Ready for change? Then appy now and make a difference! Once we have received your online application (cover letter, resume, relevant certificates), you will receive an automatic confirmation of receipt. We will then contact you as soon as possible to let you know how to proceed.

If you have questions about the position, the application process, or accessibility? Do you need support?
Our recruiter Claudia Russo is here for you:

+49 761 5159-416
recruiting@iaf.fraunhofer.de

Fraunhofer Institute for Applied Solid State Physics IAF

www.iaf.fraunhofer.de

Requisition Number: 81497 Application Deadline:

Job Segment: RF, R&D Engineer, Research Scientist, Scientific, Science, Part Time, Engineering

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